IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Electronics Friday Sessions
       Session EL-FrM

Paper EL-FrM6
Cu Film Deposition under Low Energy Cu Ion Bombardment

Friday, November 2, 2001, 10:00 am, Room 124

Session: ULSI Metallization & Interconnects
Presenter: K. Miyake, Saitama University, Japan
Authors: K. Miyake, Saitama University, Japan
Y. Ishikawa, Tohoku University, Japan
L. Won, Tohoku University, Japan
M. Isshiki, Tohoku University, Japan
M. Yamashita, Seinan Industries Co., Ltd., Japan
Correspondent: Click to Email
It is well known that low energy ion bombardment during film growth enhances surface atom migration and as a result film properties are much improved. We investigated Cu film deposition under low energy Cu ion bombardment using non-mass separated ion beam deposition system. To produce Cu ions we developed an RF excited Cu ion source, which is composed of Cu RF coil and high purity Cu rod target located in the center of the coil. An argon plasma was initially generated in the RF coil(pressure: 1 Pa, RF power: 200 W) and then, the Cu target was DC (1 kV) sputtered in the Ar plasma to generate sputtered Cu neutrals and Cu vapor. These Cu neutral particles were effectively Penning ionized in the Ar plasma and were converted to Cu ions. By applying negative bias voltage(-150 V) to a Si substrate, Cu films were deposited on the Si substrate at RT under 150 eV (or less due to collisions) Cu ion bombardment. Very fine grained Cu films were obtained by applying 150 eV bias voltage to the substrate. Film properties including microcrystalline structure, packing density, electrical resistivity, preferred orientation Cu(111), etc. were improved compared with the case of no substrate bias. The effect of low energy ion bombardment on these improvements will be discussed.