IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Applied Surface Analysis Tuesday Sessions
       Session AS-TuP

Paper AS-TuP2
Non-destructive Depth Profiling Analysis of @beta@-FeSi@sub2@ Formation Process by SR-XPS

Tuesday, October 30, 2001, 5:30 pm, Room 134/135

Session: Aspects of Applied Surface Analysis II Poster Session
Presenter: T. Saito, Japan Atomic Energy Research Institute
Authors: T. Saito, Japan Atomic Energy Research Institute
H. Yamamoto, Japan Atomic Energy Research Institute
H. Asaoka, Japan Atomic Energy Research Institute
K. Hojou, Japan Atomic Energy Research Institute
M. Imamura, National Institute of Advanced Industrial Science and Technology, Japan
N. Matsubayashi, National Institute of Advanced Industrial Science and Technology, Japan
H. Shimada, National Institute of Advanced Industrial Science and Technology, Japan
Correspondent: Click to Email
In recent year, semiconducting iron silicide,@beta@-FeSi@sub2@ is extensively attracted because of its semiconducting character. In the present study, the formation processes of @beta@-FeSi@sub2@ during solid-phase epitaxy (SPE) from Fe thin films on Si (111) surface have been investigated by means of X-ray photoelectron spectroscopy using synchrotron radiation (SR-XPS). All the experiments were carried out at a soft X-ray beam line (BL-13C) of Photon Factory. Non destructive depth-profiling analysis with changing excitation energy (220 - 900 eV) revealed that the surface composition of the iron deposited substrate was gradually changed with rising annealing temperature indicating aggregation or diffusion of the surface iron. The comparisons of experimental results with simulation results using inelastic mean free path (IMFP) of electron in Si and Fe revealed that the surface iron was diffused into Si bulk gradually with rising annealing temperature. The changes in the core-level Fe 2p photoemission spectra indicated the formation of iron silicide above annealing temperature of 673K. The valence-band photoemission spectra also indicated that metallic surface iron changed into semiconducting @beta@-FeSi@sub2@ phase by the annealing. These diffusion and silicide formation behavior were influenced by the thickness of the initial iron layer before annealing suggesting the importance of the iron diffusion in @beta@-FeSi@sub2@ formation process.