In general TOF-SIMS measurements are carried out in the so-called quasi static mode where the fluence of the analysis beam is so low that the sample damage or the erosion caused by the primary ions is regarded to be negligible. A common way to take depth profiles with a TOF-SIMS instrument is the operation in the so-called dual beam mode. In this mode sample erosion and sample analysis are carried out with two different ion beams. Whereas sample erosion is performed with a quasi DC-beam, the sample analysis is done with a pulsed ion beam of relatively low current density. This mode offers great flexibility to optimize the sputter conditions (i. e. erosion rate, energy, sputter species, angle of incidence, etc.) for the specific analytical task independent from the analytical conditions. Typically sputter ions such as Cs@super +@ or O@sub 2@@super +@ are used to optimize the secondary ion yield. For the sample analysis a Ga liquid metal ion gun with high brightness and high lateral resolution is preferable. This combination is most suitable for applications such as micro area depth profiling or 3D-analysis where the analysis is taken from a small raster field within the sputter crater. Since the contribution of the high energy analysis beam to the atomic mixing becomes more significant for small areas, the influence of the analysis beam on the depth resolution requires a more detailed study. In this paper we investigate how the ion energy of the sputter gun as well as the analysis gun affects the depth profile. The sputter ion energy is varied from 200 eV to 1000 eV for Cs@super +@ as well as for O@sub 2@@super +@ while the erosion rate is kept constant during these measurements. In addition, the current density of the analysis gun will be changed while keeping constant sputter conditions.