IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Applied Surface Analysis Monday Sessions
       Session AS-MoP

Paper AS-MoP15
Atomic-Scale Modeling of Plasma Enhanced Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Thin Films

Monday, October 29, 2001, 5:30 pm, Room 134/135

Session: Student Poster Competition/Aspects of Applied Surface Analysis I Poster Session
Presenter: S. Ramalingam, University of California, Santa Barbara
Authors: S. Sriraman, University of California, Santa Barbara
S. Ramalingam, University of California, Santa Barbara
E.S. Aydil, University of California, Santa Barbara
D. Maroudas, University of California, Santa Barbara
Correspondent: Click to Email

Hydrogenated amorphous silicon (a-Si:H) thin films grown by plasma assisted deposition from silane containing discharges are widely used in photovoltaic and flat-panel display technologies. Despite extensive research, the elementary processes that lead to film deposition, H incorporation, and defect generation are still not well understood. Developing deposition strategies for improving film quality requires a fundamental understanding of the interactions of radicals, such as SiH@sub x@ (0