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    Applied Surface Analysis Monday Sessions
       Session AS-MoP

Paper AS-MoP13
Impurity Dopant Profile Measurement and Quantization in sub-100nm Region

Monday, October 29, 2001, 5:30 pm, Room 134/135

Session: Student Poster Competition/Aspects of Applied Surface Analysis I Poster Session
Presenter: E.-S. Kang, Chung-Ang University, Korea
Authors: E.-S. Kang, Chung-Ang University, Korea
H.-J. Hwang, Chung-Ang University, Korea
G.-Y. Lee, Samchok National University, Korea
Correspondent: Click to Email
We have quantitatively extracted 1-dimensional carrier profiles from the scanning capacitance microscope (SCM) dC/dV versus V curves using the SCM inversion modeling. This is based on the spherical capacitor model not the common parallel-plate capacitor model. Since the current SCM system has a poor reproducibility for obtaining the local dC/dV curves in the higher dopant concentration region, this problem will prevent us from acquiring carrier depth information correctly. For the more accurate inverted dopant profile in sub-100nm region, therefore, we have added some factors such as SCM tip/sample interaction and fully-calculated volume charges into previous modeling parameters. Also, we have designed a new capacitance detector operating about 1.8GHz frequency. It consists of a voltage-controlled oscillator with PLL (Phased-Lock Loop), a microstrip resonator, a RF mixer IC for detecting the capacitance variations. This technique will bring a greater enhancement for the current SCM sensitivity and performance.