IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Applied Surface Analysis Monday Sessions
       Session AS-MoA

Paper AS-MoA7
Surface Analysis of Hafnium Compounds by XPS using High Energy Zr Source

Monday, October 29, 2001, 4:00 pm, Room 134

Session: Quantitative Analysis and Data Interpretation II: Electron Spectroscopies
Presenter: P. Mrozek, Micron Technology, Inc.
Authors: P. Mrozek, Micron Technology, Inc.
D.F. Allgeyer, Micron Technology, Inc.
B. Vaartstra, Micron Technology, Inc.
Correspondent: Click to Email
The deep 3d5/2 core level at Eb = 1662 eV of Hf in a metallic state, as HfO2, and as HfSi2 were investigated by X - ray photoemission using the Zr Lα source. The study was undertaken for the sake of quantitative analysis of hafnium thin films used as common diffusion barriers.@footnote 1@ Chemical shifts of Hf 3d5/2 were determined together with Auger parameter values for M3N6,7N6,7 (Ek = 1615 eV) Auger electron transition and used to probe the evolution of chemical bonding in hafnium films. The effect of initial state from the configuration interaction within the Hf 4f shell onto the quantitative analysis was examined. Common spectral overlaps of the Auger electron and photoelectron lines in hafnium compounds were discussed. @FootnoteText@ @footnote 1@Ken-ichi Yoshimoto, Satoko Shinkai, Katsutaka Sasaki, Jpn. J. Appl. Phys. 39 (2000) 1835.