AVS 47th International Symposium
    Thin Films Wednesday Sessions

Session TF-WeM
Modeling of Thin Film Growth

Wednesday, October 4, 2000, 8:20 am, Room 203
Moderator: L. Hultman, Linköping University, Sweden


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  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

8:20am TF-WeM1 Invited Paper
Hyperthermal Ion Enhanced Deposition of Materials
J.W. Rabalais, University of Houston
9:00am TF-WeM3
Thin-Film Growth on Polymer Surfaces through Polyatomic Ion Deposition: Molecular Dynamics Simulations
Y. Ji, S.B. Sinnott, The University of Kentucky
9:20am TF-WeM4
Molecular Dynamics Simulation of Ion Bombardment on Hydrogen-terminated Si(001)-(2X1) Surfaces
K. Satake, Mitsubishi Heavy Industries, Ltd., Japan, D.B. Graves, University of California, Berkeley
9:40am TF-WeM5
Low Temperature Growth of 2D Pb Islands on Si(111)7x7 Surfaces
C.S. Chang, Academia Sinica, Taiwan, ROC, S.H. Chang, National Tsing Hua University, Taiwan, ROC, W.B. Su, C.M. Wei, Academia Sinica, Taiwan, ROC, L.J. Chen, National Tsing Hua University, Taiwan, ROC, TienT. Tsong, Academia Sinica, Taiwan, ROC
10:00am TF-WeM6
Modeling of Cluster Ion-Surface Interactions with Full Inclusion of Internal Degrees of Freedom
K.J. Boyd, University of New Orleans, A. Lapicki, S.L. Anderson, University of Utah
10:20am TF-WeM7
Extension Velocities for Level Set Based Surface Profile Evolution
D.F. Richards, S. Sen, M.O. Bloomfield, T.S. Cale, Rensselaer Polytechnic Institute
10:40am TF-WeM8
Models of Electrochemical Deposition of Copper Thin Films:The Effect of Leveling Agents
S. Soukane, T.S. Cale, Rensselaer Polytechnic Institute