AVS 47th International Symposium
    Semiconductors Tuesday Sessions

Session SC+EL+SS-TuM
Compound Semiconductors

Tuesday, October 3, 2000, 8:20 am, Room 306
Moderator: J.W. Rogers, Pacific Northwest National Laboratory


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Click a paper to see the details. Presenters are shown in bold type.

8:20am SC+EL+SS-TuM1
Reconstructions and Steady-state Surface Structures on InAs(001)-(2x4): Implications for Atomistic Modeling of Growth
W. Barvosa-Carter, F. Grosse, HRL Laboratories and University of California, Los Angeles, M. Gyure, HRL Laboratories, J.H.G. Owen, C. Ratsch, HRL Laboratories and University of California, Los Angeles, R.S. Ross, J.J. Zinck, HRL Laboratories
8:40am SC+EL+SS-TuM2
Oscillations of Local Density of States at the Epitaxially Grown InAs(111)A Surfaces Characterized by Low-temperature Scanning Tunneling Microscopy
K. Kanisawa, M.J. Butcher, H. Yamaguchi, Y. Hirayama, NTT Basic Research Laboratories, Japan
9:00am SC+EL+SS-TuM3 Invited Paper
Something Old, Something New, Something Borrowed, Something BLUE - Fifty Years of III-V Compound Semiconductors!
R.D. Dupuis, University of Texas, Austin
9:40am SC+EL+SS-TuM5
Strain-Induced Anisotropy of Gallium Phosphide Islands on Gallium Arsenide
C.H. Li, University of California, Los Angeles, L. Li, University of Wisconsin, Milwaukee, Q. Fu, M.J. Begarney, R.F. Hicks, University of California, Los Angeles
10:00am SC+EL+SS-TuM6
Relative Reactivity of Arsenic and Gallium Dimers and Backbonds during the Adsorption of Molecular Oxygen on GaAs(100)(6x6)
P. Kruse, J.G. McLean, A.C. Kummel, University of California, San Diego
10:20am SC+EL+SS-TuM7 Invited Paper
Role of Ligand Termination in Atomic-Layer-Controlled Growth
R.M. Osgood, N. Camillone III, Y. Luo, M. Han, Columbia University
11:00am SC+EL+SS-TuM9
Two-step MOCVD Growth of Piezoelectric ZnO Thin Film on SiO@sub 2@/Si Substrates
S. Muthukumar, N.W. Emanetoglu, G. Patounakis, C.R. Gorla, S. Liang, Y. Lu, Rutgers University
11:20am SC+EL+SS-TuM10
Spontaneous Island Formation Caused by Reconstruction Changes During III-Sb Homoepitaxy@footnote 1@
A.S. Bracker, B.Z. Nosho, B.R. Bennett, J.C. Culbertson, B.V. Shanabrook, L.J. Whitman, Naval Research Laboratory
11:40am SC+EL+SS-TuM11
Photon-activated Electron-Transfer-Reaction Surface Modification of GaAs(001)
N. Camillone III, K.A. Khan, Columbia University, J.A. Yarmoff, University of California, Riverside and Lawrence Berkeley National Laboratory, R.M. Osgood, Jr., Columbia University