AVS 47th International Symposium
    Semiconductors Tuesday Sessions
       Session SC+EL+SS-TuM

Paper SC+EL+SS-TuM5
Strain-Induced Anisotropy of Gallium Phosphide Islands on Gallium Arsenide

Tuesday, October 3, 2000, 9:40 am, Room 306

Session: Compound Semiconductors
Presenter: C.H. Li, University of California, Los Angeles
Authors: C.H. Li, University of California, Los Angeles
L. Li, University of Wisconsin, Milwaukee
Q. Fu, University of California, Los Angeles
M.J. Begarney, University of California, Los Angeles
R.F. Hicks, University of California, Los Angeles
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We have undertaken a study to produce ordered nanostructures on compound semiconductor surfaces by the heteroepitaxial growth of highly strained island structures. Phosphorous-rich (2x4) islands are produced by decomposing phosphine on gallium arsenide (001)-(4x2) surfaces in ultrahigh vacuum. These islands exhibit anisotropy of approximately 10 to 1 with the (2x4) domains dramatically elongated along the [110] direction. The island width increases with the phosphorous coverage from 24 @Ao@ at 0.1 ML to 48 @Ao@) at 0.75 ML. This is attributed to strain induced by the lattice mismatch of phosphorous dimers on gallium arsenide. The implication of this finding to the epitaxial growth of GaP/GaAs heterostructure will be discussed at the meeting.