AVS 47th International Symposium
    Plasma Science and Technology Thursday Sessions

Session PS1-ThA
Plasma-Surface Interactions II

Thursday, October 5, 2000, 2:00 pm, Room 310
Moderator: C.B. Labelle, Bell Laboratories, Lucent Technologies


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  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

2:00pm PS1-ThA1
Plasma Surface Modification of PET and Acrylic Coating Surfaces
M.K. Shi, Pacific Northwest National Laboratory, A. Tyryshkin, Princeton University, G.C. Dunham, M. Bowman, G.L. Graff, P.M. Martin, G.J. Exarhos, Pacific Northwest National Laboratory
2:20pm PS1-ThA2
Exploring Chemical Mechanisms behind Hydrophilic Surface Modification of Polymeric Membranes by Low-temperature Plasma Treatment
M.L. Steen, E.R. Fisher, Colorado State University
2:40pm PS1-ThA3 Invited Paper
The Mechanisms of Anisotropy Control in Plasma Etching Processes
L. Vallier, CNRS/LTM, France, G. Cunge, CEA/LETI, France, J. Foucher, D. Fuard, CNRS/LTM, France, R.L. Inglebert, O. Joubert, LTM/CNRS, France
3:20pm PS1-ThA5
Pulsed Plasma Polymerisation of Acrylic Acid
S. Fraser, D.B. Haddow, R.D. Short, University of Sheffield, UK
3:40pm PS1-ThA6
Control of Ion Energies in RF Plasmas used for the Surface Modification of Polymers
D. Barton, J.W. Bradley, UMIST, UK, D.A. Steele, R.D. Short, University of Sheffield, UK
4:00pm PS1-ThA7
Surface Chemical Patterning by Plasma Polymerization
R.D. Short, N. Bullett, A.J. Beck, University of Sheffield, UK, C. Blomfield, Kratos Analytical, UK
4:20pm PS1-ThA8
The Relationship between Deprotection and Film Thickness Loss during Plasma Etching of Chemically Amplified Resists
A.P. Mahorowala, D.R. Medeiros, IBM T.J. Watson Research Center
4:40pm PS1-ThA9
Study of Defects Induced on Graphite Surface by Low Pressure Argon Plasma
A.L. Thomann, P. Brault, GREMI (CNRS), France, H. Estrade-Szwarckopf, B. Rousseau, CRMD (CNRS), France, C. Andreazza-Vignolle, P. Andreazza, CRMD (Universite d'Orleans), France
5:00pm PS1-ThA10
Novel Technique to Enhance Etch Selectivity of Carbon ARC over PR based on O@sub 2@/CHF@sub 3@/Ar Gas Chemistry
J. Hong, J.S. Jeon, Y.B. Kim, T.-H. Ahn, Samsung Electronics, South Korea