| AVS 47th International Symposium | |
| Plasma Science and Technology | Friday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | PS-FrM1 Pulsed-PECVD Organosilicon Films for Use as Insulating Biomaterials H.G. Pryce Lewis, Massachusetts Institute of Technology, D.J. Edell, InnerSea Technology, K.K. Gleason, Massachusetts Institute of Technology |
| 8:40am | PS-FrM2 Kinetic Suppression of Process Gas/Silicon Substrate Reactions During the Remote Plasma-assisted Deposition of Al@sub2@O@sub3@ and Ta@sub2@O@sub5@ on Hydrogen Terminated Silicon Substrates R.S. Johnson, H. Niimi, J.G. Hong, G. Lucovsky, North Carolina State University |
| 9:00am | PS-FrM3 Simulation and Dielectric Characterization of Reactive DC Magnetron Co-sputtered (Ta@sub 2@O@sub 5@)@sub 1-x@(TiO@sub 2@)@sub x@ Thin Films J. Westlinder, Y. Zhang, F. Engelmark, H.-O. Blom, G. Possnert, S. Berg, University of Uppsala, Sweden |
| 9:20am | PS-FrM4 Plasma Enhanced Chemical Vapor Deposition of Zirconium Oxide: Spectroscopic, Material and Device Characterizations J.P. Chang, B. Cho, D. Bae, L. Sha, University of California, Los Angeles |
| 9:40am | PS-FrM5 Etching of High-k Dielectric Zr@sub 1-x@Al@sub x@O Films in Chlorine-containing Plasmas K. Pelhos, V.M. Donnelly, A. Kornblit, M.L. Green, R.B. Van Dover, L. Manchanda, Y. Hu, M.D. Morris, J.E. Bower, Bell Laboratories, Lucent Technologies |
| 10:00am | PS-FrM6 CVD BST (Ba@sub x@Sr@sub 1-x@TiO@sub 3@) Etching Characteristics in Inductively Coupled Ar/Cl@sub 2@ Plasma I.-Y. Kwon, H.-S. Shin, J.W. Kim, Hyundai Electronics Industries Co. Ltd., Korea |
| 10:20am | PS-FrM7 Hardmask Characterization for Polysilicon Gate Patterning F.G. Celii, C. Gross, S. Detweiler, B. Trentmann, K. Kim, W.D. Kim, H.-Y. Liu, R.T. Laaksonen, Texas Instruments, Inc. |
| 10:40am | PS-FrM8 Selective, Anisotropic and Damage-Free SiO@sub 2@ Etching with a Hyperthermal Fluorine Atom Beam D.B. Oakes, W.G. Lawrence, A.H. Gelb, Physical Sciences Inc. |
| 11:00am | PS-FrM9 A Downstream Plasma Etching Model Used to Describe the Etching Mechanisms of Low-k Polymers R.R.A. Callahan, G.B. Raupp, S.P. Beaudoin, Arizona State University |
| 11:20am | PS-FrM10 Surface Studies of the Etching of Low-k Hydrogen SilsesQuioxanes (HSQ) Dielectrics under Medium and High Density Plasma Conditions C.N. Ho, Nanyang Technological University, Singapore, C.H. Low, P. Yelehanka, A. Cuthbertson, A. See, L.H. Chan, Chartered Semiconductor Manufacturing Limited, Singapore, G. Higelin, Nanyang Technological University, Singapore |
| 11:40am | PS-FrM11 Planar-Antenna Structure UHF-ECR Plasma for Highly Selective Insulator Film Etching K. Yokogawa, M. Izawa, S. Yamamoto, N. Negishi, Y. Momonoi, H. Kawahara, M. Kojima, K. Tsujimoto, S. Tachi, Hitachi, Ltd., Japan |