AVS 47th International Symposium
    Thin Films Tuesday Sessions
       Session TF-TuP

Paper TF-TuP8
Supermagnetron Plasma CVD and Qualitative Analysis of Electrical Conductive Hard Carbon (DLC) Films

Tuesday, October 3, 2000, 5:30 pm, Room Exhibit Hall C & D

Session: Poster Session
Presenter: H. Kinoshita, Shizuoka University, Japan
Authors: H. Kinoshita, Shizuoka University, Japan
M. Yoshida, Shizuoka University, Japan
Correspondent: Click to Email
Using a supermagnetron plasma chemical vapor deposition (CVD) method, electrical conductive diamond-like carbon (DLC) films were formed.@footnote 1@ The electrical conductive DLC films were suited for the formation of high performance field emitters, which were formed by coating Si tips with them. In the formation of DLC films on Si and glass wafers, i-C@sub 4@H@sub 10@/N@sub 2@ mixed gases were introduced into the discharge chamber. Deposition rate, hardness and resistivity were measured as a function of N@sub 2@ concentration, total gas pressure, rf powers or temperature of lower-electrode on which a wafer was put. With increase of N@sub 2@ concentration (up to 70%), rf powers and lower-electrode temperature, the film resisitivity was decreased. And also with decrease of total gas pressure, the film resisitivity was decreased. FT-IR spectroscopy measurements revealed that the increase in electrical conductivity could be attributed to CN single and triple bonds creation in DLC films. The lowest resistivity of 0.034 @ohm@ cm was achieved at the N@sub 2@ concentration of 65%, total gas pressure of 30mTorr, upper- and lower-electrode rf powers of 1kW/1kW, and lower-electrode temperature of 100 °C. @FootnoteText@@footnote 1@H.Kinoshita and A.Yamauchi, J.Vac.Sci.Technol.A 14, 1933 (1996).