AVS 47th International Symposium
    Thin Films Tuesday Sessions
       Session TF-TuP

Paper TF-TuP5
Influence of Bias Voltages on the Oxygen Diffusion Behaviour in dc Magnetron Sputtered In/Sn Films

Tuesday, October 3, 2000, 5:30 pm, Room Exhibit Hall C & D

Session: Poster Session
Presenter: H. Steffen, University of Greifswald, Germany
Authors: M. Quaas, University of Greifswald, Germany
H. Wulff, University of Greifswald, Germany
H. Steffen, University of Greifswald, Germany
R. Hippler, University of Greifswald, Germany
Correspondent: Click to Email
Thin metallic In/Sn films were deposited on unheated Si(100) wafers by means of dc planar magnetron sputtering at different negative substrate voltages. The In/Sn x-ray reflection line profiles of these films are broadened. The broadened profiles can be considered as an indicator of decreasing lattice perfection in the as-deposited films. To study the influence of the different microstructures on the oxygen diffusion behaviour these films were annealed in a vacuum chamber mounted on a theta-theta-diffractometer. Using in-situ high-temperature grazing incidence x-ray diffractometry (GIXRD) the growth of crystalline indium-tin-oxide (ITO) layers was observed. From the time dependence of the ITO(222) peak intensity conclusions on the reaction kinetics can be drawn. An analytical model was developed for the investigation of the diffusion process by means of the x-ray integral intensity. From this model the effective diffusion coefficients D were determined for films deposited at different substrate voltages. The correllation between the film microstructure and the variing diffusion coefficients is discussed.