AVS 47th International Symposium
    Thin Films Tuesday Sessions
       Session TF-TuP

Paper TF-TuP35
Study on the Oxidation Behavior of Poly Si @sub 1-x@Ge @sub x@ Films

Tuesday, October 3, 2000, 5:30 pm, Room Exhibit Hall C & D

Session: Poster Session
Presenter: S.-K. Kang, Yonsei University, Korea
Authors: S.-K. Kang, Yonsei University, Korea
D.-H. Ko, Yonsei University, Korea
S.-H. Oh, Pohang University of Science and Technology, Korea
C.-G. Park, Pohang University of Science and Technology, Korea
T.-H. Ahn, Hyundai Electronics Industries Co. Ltd, Korea
M.-S. Joo, Hyundai Electronics Industries Co. Ltd, Korea
K.-C. Lee, Ju-Sung Engineering Co. Ltd, Korea
D.-Y. Yang, Ju-Sung Engineering Co. Ltd, Korea
Correspondent: Click to Email
We investigated the oxidation behavior of poly Si @sub 1-x@Ge @sub x@ films (X=0.15, 0.42). The samples were oxidized using a conventional furnace in wet oxygen ambient at 700 °C. The composition and thickness of oxide were analyzed by rutherford backscattering spectrometry (RBS) before and after the oxidation using rump simulation. The distribution and chemical bonding of Si, Ge, O elements were analyzed by X-ray photoelectron spectroscopy(XPS). The microstructures of the films were analyzed by HR transmission electron microscopy(TEM). In the case of poly Si @sub 0.85@Ge @sub 0.15@ films, SiO @sub 2@ was formed, rejecting Ge, and subsequently Ge content increased at the SiO @sub 2@/ poly Si @sub 1-x@Ge @sub x@ interface. We observed a small amount of Ge and GeO @sub 2@ in oxide layer by HR-TEM, XPS. In the case of poly Si @sub 0.58@Ge @sub 0.42@ films, we found the formation of both SiO @sub 2@ and GeO @sub 2@ on the poly Si @sub 1-x@Ge @sub x@ films due to the high Ge content. The oxidation rate of poly Si @sub 1-x@Ge @sub x@ increased with Ge content in poly Si @sub 1-x@Ge @sub x@ films under the same oxidation condition.