AVS 47th International Symposium
    Thin Films Tuesday Sessions
       Session TF-TuP

Paper TF-TuP31
Ferromagnetic Resonance and Magnetic Anisotropy in Epitaxial Fe/Ag Thin Films on GaAs (100)

Tuesday, October 3, 2000, 5:30 pm, Room Exhibit Hall C & D

Session: Poster Session
Presenter: W. Wu, University of California, Irvine
Authors: W. Wu, University of California, Irvine
C.S. Tsai, University of California, Irvine and Academia Sinica, Taiwan
C.C. Lee, University of California, Irvine
H.J. Yoo, University of California, Irvine
R. Chuang, University of California, Irvine
H. Hopster, University of California, Irvine
Correspondent: Click to Email
Iron/silver thin films were epitaxially grown on GaAs (100) substrate by molecule beam epitaxy (MBE) system at different growing temperatures and layer structures. Magneto-optic kerr effect (MOKE) experiment was used to measure the magnetization and sample magnetic anisotropy. The common features in the ferromagnetic resonance (FMR) peak-to-peak linewidth @delta@H@sub pp@ are identified, which are dependent on layer structures and growth condition. The measured narrowest linewidth @delta@H@sub pp@ is 26 Oe. We study the coupling between the ultrahigh frequency microwave signal and the spin excitation happened in ferromagnetic Fe thin film. Maximum coupling and thus strong attenuation of the microwave power occur at the FMR frequency f@sub res@ of Fe, as determined by the applied magnetic fields. Microwave notch filter devices were successfully fabricated using the deposited magnetic structures. Because of the high saturation magnetization of Fe film, it is much easy to achieve higher devices operation frequency under relatively lower applied magnetic field. The peak absorption carrier frequency of a propagating microwave has been tuned in a range from 9.6 to 21 GHz in a modest magnetic field from 0 to 2900 Oe for single layer structures. For multilayer structures, peak absorptions are intensified with tuned range from 10.6 to 27 GHz. The experimental results are in good agreement with the theoretical prediction for the case in which the magnetic field is applied along the easy axis of the Fe film. It is desirable to incorporate this kind of magneto static wave (MSW)-based devices in compound semiconductor system, in order to achieve integration into microwave integrated circuits.