AVS 47th International Symposium
    Thin Films Tuesday Sessions
       Session TF-TuP

Paper TF-TuP24
Effect of Interlayer on Thermal Stability of Nickel Silicide

Tuesday, October 3, 2000, 5:30 pm, Room Exhibit Hall C & D

Session: Poster Session
Presenter: J.S. Maa, Sharp Laboratories of America, Inc.
Authors: J.S. Maa, Sharp Laboratories of America, Inc.
Y. Ono, Sharp Laboratories of America, Inc.
F. Zhang, Sharp Laboratories of America, Inc.
S.T. Hsu, Sharp Laboratories of America, Inc.
Correspondent: Click to Email
Nickel silicide is one of the silicide material for future IC devices with ultra-shallow junctions. It has a low Si consumption rate. Low resistance nickel monosilicide can be applied easilly to sub-100nm structures. The major challenge is its poor therml stability for film of about 20nm. Here we study the effect of interlayer materials of Ti, Al, Pt, and Pd on the structure and thermal stability of nickel silicide. Ti and Al can enhance the epitaxial growth of nickel disilicide, but Pt can improve the thermal stability of nickel monosilicide. Pd was found not as effective as Pt. By using sequential deposition and RTA annealing, stable silicide can be formed on ultra-shallow junction with a 40nm junction depth. It is demonstrated that this structure is stable at 800 degree C with very low junction leakage.