AVS 47th International Symposium
    Thin Films Tuesday Sessions
       Session TF-TuP

Paper TF-TuP21
Monochromatized Light Emitter using Si Doped Glass with Dielectric Multilayer Resonator

Tuesday, October 3, 2000, 5:30 pm, Room Exhibit Hall C & D

Session: Poster Session
Presenter: T. Ichinohe, Tokyo National College of Technology, Japan
Authors: T. Ichinohe, Tokyo National College of Technology, Japan
S. Nozaki, The University of Electro-Communications, Japan
H. Morisaki, The University of Electro-Communications, Japan
S. Masaki, Tokyo National College of Technology, Japan
K. Kawasaki, TDY Co. Ltd., Japan
Correspondent: Click to Email
Extensive studies have been made on nanometer sized Si ultrafine particle films (the Si nano-structured films) as a new functional thin film material applicable to Si based photo-electronic functional devices. Si-doped glass (Si-DG) films, especially, are expected because of the chemical stability and less aging degradation. However, they have wide bandwidth of luminescence spectral. To overcome the drawback for light emitter using Si-DG films, we fabricated a Fabry-Perot optical resonator with dielectric multilayer reflector. Both Si-DG films and multilayered reflectors were formed by the ion beam sputter-deposition (IBSD) technique. A conventional method to fabricate Si-DG films was the co-sputtering of a composite target, composed of Si chips placed on a SiO@sub 2@ target. The multilayer-reflecting mirror was fabricated by alternate sputtering of 5-inch CeO@sub 2@ target and Si/SiO@sub 2@ composite one. The quarter-wavelength optical thickness rule was used to design the multilayered reflector. To activate a Si-DG layer for a light emitter, the Si-DG film was heat-treated with about 900 °C. It was found that the heat-treatment was contributed to form Si nano particles with a diameter of about 3-4 nm estimated by TEM observation. The luminescent Si-DG film showed extremely broad PL spectra, the full width of half maximum (FWHM) being typically 1 eV. In order to improve the spectral distribution, the PL spectrum of Si-DG film with the optical cavity, which was sandwiched by metal (Ag) film and a dielectric multilayered reflector, reduced down about 0.1 eV, using a 20 paired CeO@sub 2@/Si-DG multilayer reflector. The application to EL device with the narrow band spectrum can be made by the improvement of contact electrode.