AVS 47th International Symposium
    Thin Films Tuesday Sessions
       Session TF-TuP

Paper TF-TuP16
SrBi@sub 2@Ta@sub 2@O@sub 9@ Ferroelectric Films Deposited by PLD Under Different Annealing Conditions

Tuesday, October 3, 2000, 5:30 pm, Room Exhibit Hall C & D

Session: Poster Session
Presenter: M.P. Cruz, Centro de Investigacion y de Estudios Superiores de Ensenada, México
Authors: M.P. Cruz, Centro de Investigacion y de Estudios Superiores de Ensenada, México
J.J. Portelles, Universidad de La Habana, Cuba
J.M. Siqueiros, UNAM, México
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A new step in the deposition process of SrBi@sub 2@Ta@sub 2@O@sub 9@ (SBT) films is introduced to avoid short circuits in the electrode-ferroelectric-electrode capacitor due to microcracks in the SBT material. Here, the SrBi@sub 2@Ta@sub 2@O@sub 9@ films, deposited on Pt/TiO@sub 2@/SiO@sub 2@/Si substrates by PLD, were grown in a two-step process, each with its corresponding annealing treatment, in such a way that the second deposit fills the cracks of the first layer preventing the percolation of the electrode material from the top to the bottom electrode. SEM, TEM, XRD and AES techniques were used to characterize the films. X-ray analysis showed a BiO@sub 2@ crystalline phase for low deposition and annealing temperatures and its transformation into polycrystalline SBT as those temperatures increased. After Pt top electrodes were deposited on the SBT films, the micro structural results obtained with the abovementioned techniques, were correlated to the ferroelectric properties observing an increase in polarization values with processing temperature. DGAPA-UNAM, Proj. IN104000, CoNaCyT, Proj. 33856E. Thanks are due to E. Aparicio, P. Bartolo, J. Fernández, I. Gradilla, P. Ruiz and G. Vilchis.