AVS 47th International Symposium
    Thin Films Tuesday Sessions
       Session TF-TuP

Paper TF-TuP15
The Effect of Annealing on the Electroless Plated Cu Metallization for Sub-micron Interconnection

Tuesday, October 3, 2000, 5:30 pm, Room Exhibit Hall C & D

Session: Poster Session
Presenter: J.H. Lin, National Tsing Hua University, Taiwan
Authors: J.H. Lin, National Tsing Hua University, Taiwan
T.L. Lee, National Chiao Tung University, Taiwan
Y.Y. Tsai, National Tsing Hua University, Taiwan
X.W. Liu, National Tsing Hua University, Taiwan
C.C. Lin, National Chiao Tung University, Taiwan
H.C. Shih, National Tsing Hua University, Taiwan
Correspondent: Click to Email
Both patterned and blank wafers are carried out using Pd as catalyst by plasma immersion ion implantation (PIII) after which Cu is electroless plated. The characteristics of electroless plated copper specimens after annealing in the 95% nitrogen + 5% hydrogen ambient atmosphere with an annealing temperature from 150 to 700 for 1 hour are investigated by sheet resistance, surface roughness, crystallographic texture, cross-section morphology, film hardness, adhesion strength and microstructure. The sheet resistivity of Cu film decreases from 3.8 to 3.3 µ *-cm after annealing at the temperature from 150 to 700. AFM shows that the surface became rougher as the annealing temperature getting higher. HRTEM images show that, the Pd implantation layer of the as-received specimen is an amorphous structure and crystallized after the annealing treatment. If the annealing temperature is higher than 300, the copper reflow effect in via or trench is very clear. Therefore, the post electroless copper annealing at about 300 stabilizes the copper microstructure and completes interconnect metallization performance.