AVS 47th International Symposium
    Thin Films Tuesday Sessions
       Session TF-TuP

Paper TF-TuP14
Epitaxial Growth of CeO@sub 2@ Film on YSZ Buffered Si (111) Substrates

Tuesday, October 3, 2000, 5:30 pm, Room Exhibit Hall C & D

Session: Poster Session
Presenter: J.H. Yang, Sungkyunkwan University, Korea
Authors: J.H. Yang, Sungkyunkwan University, Korea
K.W. Lee, Sungkyunkwan University, Korea
J.W. Seo, Sungkyunkwan University, Korea
C.Y. Park, Sungkyunkwan University, Korea
Correspondent: Click to Email
We have grown cerium dioxide (CeO@sub 2@) films as an insulating layer for silicon-on-insulator (SOI) structure. When CeO@sub 2@ was deposited on Si (111) substrate up to 620 by using electron beam evaporator (ANELVA VI-43N), at the interface between CeO@sub 2@ film and Si (111) substrates, the SiO@sub 2@ layer was observed which is in agreement with earlier report.@footnote 1@ The structure of CeO@sub 2@ films on Si (111) substrate was formed to be columnar. We observed that the columnar structure of CeO@sub 2@ films and SiO@sub 2@ formation disturbed the epitaxial growth of the Si film on top layer. Hence, we have deposited YSZ as a buffer layer on the Si (111) substrate and grown CeO@sub 2@ film. We analyzed YSZ and CeO@sub 2@ films by XRD, HRTEM and AFM. We found that deposition of YSZ on Si (111) prohibits the growth of SiO@sub 2@ layer. The morphology of CeO@sub 2@ film on YSZ buffered substrates was improved as compare with the morphology of CeO@sub 2@ film with not YSZ buffered substrates. @FootnoteText@ @footnote 1@C.G. Kim et al, J. Kor. Phys. Soc., 32, 64(1998).