AVS 47th International Symposium
    Thin Films Tuesday Sessions
       Session TF-TuP

Paper TF-TuP12
Selective Growth of TiO@sub 2@ Thin Films on Si(100) Surfaces by Combination of MOCVD and Microcontact Printing Method

Tuesday, October 3, 2000, 5:30 pm, Room Exhibit Hall C & D

Session: Poster Session
Presenter: H.-Y. Chae, Sungkyunkwan University, Korea
Authors: B.-C. Kang, Sungkyunkwan University, Korea
J.-H. Lee, Sungkyunkwan University, Korea
H.-Y. Chae, Sungkyunkwan University, Korea
D.-Y. Jung, Sungkyunkwan University, Korea
S.-B. Lee, Sungkyunkwan University, Korea
J.-H. Boo, Sungkyunkwan University, Korea
Correspondent: Click to Email
Patterning of TiO@sub 2@ thin films was successfully performed by MOCVD onto Si (100) substrates of which surface were modified by an organic thin film. The organic thin film of self-assembled monolayer (SAM) was in first obtained by the micro-contact printing (µm-CP) method. Selective deposition of TiO@sub 2@ thin film with 1500 Å thickness has then been carried out onto those surfaces at the temperature in the range of 300 to 500 °C by MOCVD without any carrier and bubbler gas. AES and XRD analysis showed that deposited TiO@sub 2@ thin film has a stoichiometric composition in the depth and polycrystalline anatase phase. @alpha@-step profile and optical microscopic images also showed that the boundaries between OTS SAMs areas and selectively deposited TiO@sub 2@ thin film areas are very definite and sharp. Capacitance-voltage measurement made on a TiO@sub 2@ thin film gave a dielectric constant of 21, suggesting a possibility of electronic materials applications.