AVS 47th International Symposium
    Thin Films Thursday Sessions
       Session TF-ThM

Paper TF-ThM4
Development of a PECVD Antireflective Layer for 193nm Polysilicon Gate Applications

Thursday, October 5, 2000, 9:20 am, Room 203

Session: Optical Films
Presenter: W. Fan, Novellus Systems, Inc.
Authors: W. Fan, Novellus Systems, Inc.
Y. Wang, Novellus Systems, Inc.
K. MacWilliams, Novellus Systems, Inc.
J. Tian, Novellus Systems, Inc.
Z. Karim, Novellus Systems, Inc.
K. Ring, Conexant Systems
Correspondent: Click to Email
A PECVD silicon oxynitride film used as an antireflective layer (ARL) has been developed for patterning sub-0.15µm polysilicon gate at 193nm wavelength. PROLITH/2@super TM@ simulations were carried out to determine the range of optical parameters which results in minimum substrate reflectivity (e.g., a few tenths of one percent). An oxynitride film with n ~ 1.80, k ~ 0.60, and t ~ 260Å, which offers less than 0.1% reflectivity, can be successfully deposited by a typical sequential PECVD chamber. In conjunction with achieving a film with these parameters, film deposition process window, film measurement variation, and post-treatment effects were taken into consideration to ensure minimal reflectivity. Finally, the films were patterned with 193nm photoresists. Cross-section SEM shows tight CD control.