AVS 47th International Symposium
    Thin Films Monday Sessions
       Session TF-MoM

Paper TF-MoM8
A Study on the Characteristics of TiAlN Thin Film Deposited by Atomic Layer Chemical Vapor Deposition Method

Monday, October 2, 2000, 10:40 am, Room 203

Session: Atomic Layer Chemical Vapor Deposition I
Presenter: H. Jeon, Hanyang University, South Korea
Authors: H. Jeon, Hanyang University, South Korea
J.W. Lee, Hanyang University, South Korea
J.H. Koo, Hanyang University, South Korea
T.H. Doh, Hanyang University, South Korea
Y.D. Kim, Hanyang University, South Korea
Correspondent: Click to Email
Atomic Layer Chemical Vapor Deposition(ALCVD) method is one of the new deposition method to grow very thin films.@footnote 1@ Conventional PVD and CVD methods exhibit problems such as poor step coverage, impurity contamination and particle generation. ALCVD method has a lot of advantages over other CVD processes and these are excellent thickness uniformity, conformal step coverage, very low pinhole density, and complete elimination of particle generation by gas phase reaction.@footnote 2@ The sequential control of the growth in ALCVD system is based on saturating surface reactions between the substrate and each of the reactant needed for the compound to be grown. Each surface reaction adds full or partial fraction of monolayer of the material on the surface. Here we deposited TiAlN ternary diffusion barrier by ALCVD method. Ternary diffusion barrier is considered to be more efficient than binary diffusion barrier such as TiN. But ternary film of Ti-Si-N has high resistivity to apply for actual process. In this study we deposited TiAlN ternary diffusion barrier to study the diffusion barrier characteristics.@footnote 3@ TiCl@sub 4@ vapor, DMAH-EPP vapor, and NH@sub 3@ gas were alternatively introduced into reactor to form TiAIN by ALCVD. The physical and chemical properties of TiAlN films were analized by TEM, AES, RBS, and SEM. The growth mechanism will be discussed based on the results of characteristics of TiAlN. @FootnoteText@ @footnote 1@T. Suntola, Thin Solid Films, 216, 84-89(1992) @foontote 2@S. Yokoyama, H. Goto, T. Miyamoto, N. Ikeda, K. Shibahara, Applied Surface Science, 112, 75-81(1997) @footnote 3@ C. W. Kim, K. H. Kim, Thin Solid Films, 307, 113-119(1997).