AVS 47th International Symposium
    Surface Science Wednesday Sessions
       Session SS2-WeM

Paper SS2-WeM6
Molecular Dynamics Simulation of Hyperthermal Ne@super +@ Scattering From Si(100)

Wednesday, October 4, 2000, 10:00 am, Room 209

Session: Stimulated Surface Processes
Presenter: T. Tzvetkov, University of Notre Dame
Authors: J. Camden, University of Notre Dame
T. Tzvetkov, University of Notre Dame
C.L. Quinteros, University of Notre Dame
D.C. Jacobs, University of Notre Dame
Correspondent: Click to Email
An understanding of ion/surface energy transfer at hyperthermal energies is important to the semiconductor industry, where low-energy ion modification of surfaces is widely employed. In this paper, we present molecular dynamics simulations of Ne@super +@ scattering from Si(100) at hyperthermal energies (below 200eV). In the trajectory calculations, we use a Ne-Si potential consisting of pair-wise additive terms describing the repulsion between the projectile and all Si atoms within a slab, and a classical image charge attraction between Ne@super +@ and the bulk dielectric. The surface reconstruction is taken into account in the Si lattice simulation. A careful analysis of different trajectory contributions to the scattering signal is applied. The calculations for different surface conditions, including scattering from surface defects (steps, adatoms and vacancies), will be discussed. The calculations are compared to experimental results for Ne@super +@ scattering from Si(100) at energies ranging from 25 to 200 eV.