AVS 47th International Symposium
    Surface Science Wednesday Sessions
       Session SS2-WeM

Paper SS2-WeM2
Scattering of Hyperthermal O@super +@ Ions on a SiO@sub x@ Surface

Wednesday, October 4, 2000, 8:40 am, Room 209

Session: Stimulated Surface Processes
Presenter: C.L. Quinteros, University of Notre Dame
Authors: C.L. Quinteros, University of Notre Dame
T. Tzvetkov, University of Notre Dame
D.C. Jacobs, University of Notre Dame
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Thin SiO@sub x@ films are grown on a Si(100) surface using a low current, hyperthermal (5-200eV) O@super +@ beam under UHV conditions. Scattered products are collected as a function of incident beam energy and angle, oxygen ion dose, temperature, and surface roughness. A rotatable quadrupole mass spectrometer detector resolves the energy-, mass-, and angular-distributions of the scattered species. Incident O@super +@ is efficiently neutralized, and both positively (Si@super +@, SiO@super +@) and negatively (O@super -@, O@sub 2@@super -@ ) charged products are formed. The product ion yields strongly increase with O@super +@ dose, as the oxide film develops. Individual features in the energy distributions of the scattered products are assigned to scattering events occurring at particular atomic sites on the surface. Product channel contributions originating from chemical reaction with incident O@super +@ and physical sputtering are differentiated.