AVS 47th International Symposium
    Surface Science Wednesday Sessions
       Session SS-WeP

Paper SS-WeP25
Atomic Resolution Imaging of Si(100)2x1-H Surface with Non-contact AFM

Wednesday, October 4, 2000, 11:00 am, Room Exhibit Hall C & D

Session: Poster Session
Presenter: A. Yoshimoto, Osaka University, Japan
Authors: A. Yoshimoto, Osaka University, Japan
Y. Sugawara, Osaka University, Japan
S. Morita, Osaka University, Japan
Correspondent: Click to Email
Noncontact Atomic Force Microscopy (NC-AFM) have achieved true atomic resolution in 1995. NC-AFM is one of the most promising tools for surface analysis of materials including insulators on an atomic scale. In fact, many experimental groups reported atomically resolved images on various surfaces. NC-AFM imaging mechanism which contributes to the image contrast is still in progress. Although NC-AFM imaging mechanism has been investigated mainly on a chemically reactive surfaces such as semiconductor surface (Si(111)-7x7, Si(111) r3xr3-Ag etc.), there is no report on a comparative study between a reactive surface and an inactive surface using the same tip. In the present experiments, we performed the NC-AFM imaging on reactive Si(100)-2x1 reconstructed surface with dangling bond and inactive hydrogen- terminated Si(100)-2x1-H surface without the dangling bond. As a force sensor, we used a silicon tip with dangling bond, which was cleaned by Ar ion sputtering. As a result, by using the same tip, we succeeded in obtaining atomic resolution images on Si(100)-2x1 reconstructed surface and Si(100)-2x1-H monohydride surface. We found that the distance between bright spots of AFM images increased by the hydrogen termination. This suggests NC-AFM has capability for hydrogen atom imaging of Si (100) 2x1-H on an atomic scale.