AVS 47th International Symposium
    Surface Science Wednesday Sessions
       Session SS-WeP

Paper SS-WeP22
Effects of Low Dose Ion Bombardment Upon the Hg-distribution in a CeO2-layer in a TL-lamp

Wednesday, October 4, 2000, 11:00 am, Room Exhibit Hall C & D

Session: Poster Session
Presenter: C. Van der Marel, Philips Electronics, The Netherlands
Authors: C. Van der Marel, Philips Electronics, The Netherlands
V.H. Hildenbrand, Philips Research, The Netherlands
Correspondent: Click to Email
Experiments have been done with a TL-lamp of which the inside was coated with CeO2. After a long time of operation the Hg vapor pressure in the lamp was too low to sustain the plasma. ARXPS was applied to determine the chemical state of the Hg and to obtain information about the depth-distribution of the Hg in the upper few nm of the CeO2-layer. Additionally experiments were done with a low flux, low energy ion beam (0.5 kV). The dose was chosen such that, even when a sputter yield of 1 is assumed, much less then 1 ML might be removed. The influence of successive ion bombardments upon the Hg-distribution was investigated. It is found that even low dose ion bombardment, in which only a small fraction of the surface is directly hit by the ions, has an important influence upon the depth distribution of the Hg within the layer.