AVS 47th International Symposium
    Surface Science Wednesday Sessions
       Session SS-WeP

Paper SS-WeP10
Oxide and Nitride Film Growth on Microfabricated Cantilevers by Pulsed Mode DC Magnetron Sputtering

Wednesday, October 4, 2000, 11:00 am, Room Exhibit Hall C & D

Session: Poster Session
Presenter: K.P. Wiederhold, Southwest Texas State University
Authors: P. Cao, University of Houston
M.-S. Lim, University of Houston
S.S. Perry, University of Houston
K.P. Wiederhold, Southwest Texas State University
Y. Yamaguchi, Southwest Texas State University
E.J. Mitchell, Southwest Texas State University
D.C. Koeck, Southwest Texas State University
H.C. Galloway, Southwest Texas State University
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We have investigated the growth of TiN and Al@sub 2@O@sub 3@ films on microfabricated atomic force microscopy (AFM) probes. These films are grown using a pulsed mode DC Magnetron sputtering technique. This method allows us to extend the range of traditional DC magnetron sputtering to a wider range of conductivities for oxide and nitride film growth. The TiN thin films tend to grow in a highly stressed manner which can cause severe deformations of the microfabricated cantilevers. The deposition of a thick interfacial Ti layer, increased growth temperature, and the use of pulsed mode deposition are effective in producing usable cantilevers. The Al@sub 2@O@sub 3@ films have been produced with both Ti and Al interfacial layers with less cantilever deformation than the TiN coating, indicating only moderate stress of the Al@sub 2@O@sub 3@ films. These studies indicate that an interfacial layer is essential for adhesion and that Al layers result in lower interfacial stress as compared to Ti layers. Resistivity, XPS and AFM measurements have been used to characterize blanket films grown by the same methods. Specialized samples are used to measure the tip shape and the conductive tips are used as point contacts to characterize the electrical properties.