AVS 47th International Symposium
    Surface Engineering Tuesday Sessions
       Session SE-TuP

Paper SE-TuP6
On the Shielding Influence of Charged Particles on the Kinetics of the Oxide Film Growth

Tuesday, October 3, 2000, 5:30 pm, Room Exhibit Hall C & D

Session: Poster Session
Presenter: D.G. Mukhambetov, Karaganda Metallurgical Institute, Kazakhstan
Authors: D.G. Mukhambetov, Karaganda Metallurgical Institute, Kazakhstan
O.V. Chalay, Karaganda Metallurgical Institute, Kazakhstan
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The object of this work was to investigate kinetics of the two phase oxide film growth on the @alpha@-Fe surface at the temperatures of 650 - 750 K. It is experimentally attained that film thickness h - time oxida- tion @tau@ relationship in the range denoted above is logarithmic function, whereas Kabrera and Mott's theory gives square law of the film growth. In our work analytical treatment of obtained data was made on the basis of this theory, but we suppose that self-deceleration of the film growth is caused not by attenuation of the electric intensity in the film because of increase of h but by shielding influence of the space charge of diffusing ions and elec- trons in that oxide film. With that aim in view the Debye shielding distance for plasma substance state in the oxide film was taken into consideration. Logarithmic law of the oxide film growth was derived. Estimating calcula- tions of this law parameters quantitatively corresponding with the literature data were made . The obtained results were used in the development of the surface oxidation technology of the electric steel.