AVS 47th International Symposium
    Photonics Tuesday Sessions
       Session PH-TuP

Paper PH-TuP2
Band Gap Modulation from 0.5 eV to 1.5 eV Employing the Alloy (CdTe)@sub x@(In@sub 2@Te@sub 3@)@sub 1-x@@footnote 1@

Tuesday, October 3, 2000, 5:30 pm, Room Exhibit Hall C & D

Session: Poster Session
Presenter: M. Meléndez-Lira, CINVESTAV-IPN, México
Authors: M. Meléndez-Lira, CINVESTAV-IPN, México
M. Zapata-Torres, CICATA-IPN, México
R. Castro-Rodríguez, CINVESTAV-IPN, México
Correspondent: Click to Email
CdTe is a semiconductor with a wide range of applications and alloyed with S, Zn, or Se allows high energy band gap modulation. To increase the range of band gap modulation in the near infrared employing CdTe alloys is a very interesting possibility with potential applications in the optoelectronic industry. We produced thin films of the alloy (CdTe)@sub x@(In@sub 2@Te@sub 3@)@sub 1-x@ employing the close spaced vapor transport technique combined with free evaporation. As sources we employed CdTe and In@sub 2@Te@sub 3@ powders. Composition was controlled by the temperature of sources and substrate. Structural characterization was carried out employing X-ray diffraction, scanning electron microscopy and atomic force microscopy. Chemical composition was determined by energy dispersive X-ray analysis. Room temperature transmission and photoreflectance spectroscopies were employed for optical characterization. The results shown that for single phase samples a sharp transition band edge in the transmission spectrum is obtained. From it a potential band gap modulation in the range from 0.5 eV to 1.5 eV is clearly observed. Photoreflectance results clearly showed that the band edge is of the direct type. The feasibility of the alloy is discussed taking in account the higher solubility of CdTe in In@sub 2@Te@sub 3@ because of its ordered vacancy structure. The band gap change is correlated with the indium content in the samples. @FootnoteText@@footnote 1@ Work partially supported by CONACyT.