AVS 47th International Symposium
    Organic Films and Devices Wednesday Sessions
       Session OF-WeP

Paper OF-WeP10
Growth Modes of Vacuum Evaporated Pentacene on SiO2, MoS2 and Au Substrates

Wednesday, October 4, 2000, 11:00 am, Room Exhibit Hall C & D

Session: Poster Session
Presenter: S. Zorba, University of Rochester
Authors: S. Zorba, University of Rochester
Q.T. Toan, University of Rochester
N.J. Watkins, University of Rochester
Y. Gao, University of Rochester
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Pentacene is one of the most widely used active material in organic thin-film transistors because of its remarkably high mobility. We studied the growth modes of vacuum evaporated pentacene on SiO2, MoS2 and Au substrates using Atomic Force Microscopy. Pentacene films were grown side by side on SiO2 and MoS2 substrates and separately on Au substrate by vacuum evaporation at room temperature with a deposition rate of 0.6 @Ao@/s. Pentacene films grow on SiO2 substrate in a layer by layer manner with full coverage at average thickness of 20 @Ao@ and have the highest degree of molecular ordering with large dendritic grains among the three materials. Films grown on MoS2 substrate reveal two different growth modes, ice-flake like growth and granular growth, both of which seem to compete with each other. On the other hand, films deposited on Au substrate show granular structure.