AVS 47th International Symposium
    Organic Films and Devices Wednesday Sessions
       Session OF-WeP

Paper OF-WeP1
Electrical Properties of Polyvinylidene Fluoride Films Prepared by Physical Vapor Deposition Method

Wednesday, October 4, 2000, 11:00 am, Room Exhibit Hall C & D

Session: Poster Session
Presenter: G.B. Park, Yuhan College, Korea
Authors: G.B. Park, Yuhan College, Korea
M.Y. Chung, Inha University, Korea
S.W. Lee, Inha University, Korea
S.H. Park, Inha University, Korea
D.C. Lee, Inha University, Korea
Correspondent: Click to Email
Poly Vinylidene Fluoride thin films were prepared by using a physical vapor deposition and high electric field applying method. Thin films were studied with DSC, FT-IR, X-ray diffraction and electrical conduction measuring system. The melting point of PVDF thin film increases with increasing substrate temperature. It is identified by FT-IR that the crystalline phase of @alpha@ type PVDF is transformed to @beta@ type with increasing electric field applied during preparation. It is found that the crystallinity of PVDF thin films increases from 49.8% to 67% with increasing substrate temperature from 30 to 80. The absorption current of @alpha@ and @beta@ type PVDF increases with increasing the electric field applied under measurement and the current increment of @beta@ type is higher than that of @alpha@ type. The ion hopping distance, derived from a relation between current density and measuring temperature, increases from 51.5 Å to 153.5 Å with increasing temperature. >From above results, the conduction mechanism of PVDF thin film is estimated as ionic.