AVS 47th International Symposium
    Processing at the Nanoscale/NANO 6 Thursday Sessions
       Session NS+NANO6+MC-ThA

Paper NS+NANO6+MC-ThA7
Optical Properties of Strained GaInP/InP Quantum Dots Studied with STM Based Electro-luminescence

Thursday, October 5, 2000, 4:00 pm, Room 302

Session: Near-field Optics and Photonics
Presenter: M.K.-J. Johansson, Lund University, Sweden
Authors: M.K.-J. Johansson, Lund University, Sweden
U. Hakanson, Lund University, Sweden
J. Johansson, Lund University, Sweden
M.-E. Pistol, Lund University, Sweden
L. Montelius, Lund University, Sweden
L. Samuelson, Lund University, Sweden
Correspondent: Click to Email
The physics of nanometer scale structures has become a rapidly evolving field sparked by considerable interest from both science and technology. In the effort to assess the optical properties of individual nano-structures the use of scanning tunneling microscopy (STM) as the excitation source has received a lot of attention.@footnote 1@ Compared to more conventional techniques such as photoluminescence and cathodoluminescence the excited volume is very small and a further advantage is that the excitation energy can be greatly varied, from resonant conditions to above the impact ionization threshold. In addition STM provides very detailed information of the electronic structure and thus a manifold of data can be obtained within the same experiment. Here we will present measurements using a variable temperature UHV-STM combined with a scanning electron microscope. Furthermore, the system is equipped with an ex-situ laser source and optical detection system allowing a combined study of STM based electroluminescence, laser induced photoluminescence and cathodoluminescence to be performed without the need to change experimental conditions and set-up. In this report we investigate the optical properties of capped InP quantum dots grown by metalorganic vapor phase epitaxy on a highly doped GaInP layer, lattice matched to GaAs grown on a GaAs(001) substrate. We discuss the mechanisms of inducing luminescence and the dependence on excitation energy using the InP quantum dots as a model system. @FootnoteText@ @footnote 1@See for instance, A. Gustafsson et al. J. Appl. Phys. Rev. 88, 1715 (1998) and references therein.