AVS 47th International Symposium
    Material Characterization Tuesday Sessions
       Session MC-TuA

Invited Paper MC-TuA4
Quantitative Surface Analysis Using Ion Implantation

Tuesday, October 3, 2000, 3:00 pm, Room 207

Session: Quantitative Surface Analysis
Presenter: F.A. Stevie, Lucent Technologies
Authors: F.A. Stevie, Lucent Technologies
J.M. McKinley, Lucent Technologies
C.N. Granger, Lucent Technologies
F. Hillion, CAMECA Instruments
D.S. Simons, National Institute of Standards and Technology
P. Chi, National Institute of Standards and Technology
B. Schueler, Physical Electronics
C.B. Vartuli, Lucent Technologies
T.L. Shofner, Lucent Technologies
L.A. Giannuzzi, University of Central Florida
Correspondent: Click to Email
This paper summarizes current uses of ion implantation to quantify analytical data. SIMS is emphasized, but the methods are applicable to other techniques. SIMS requires secondary standards for calibration. Ion implantation has been traditionally used to create SIMS standards because any element can be implanted and the dose and energy tailored for the application. High reproducibility has been demonstated for SIMS measurements using these standards. Absolute dose measurements can be made for boron and arsenic using NIST reference materials. Quantification at a surface can be achieved using implantation through a removable layer by selecting the implant energy so that the peak of the implant is at the interface between the removable layer and the substrate. This mehod has been successful for surface SIMS, time-of-flight SIMS, and TXRF measurements. The dose can be increased to provide detection and quantification by other analytical methods, such as AES, XPS, and EDS. High dose quantification can also be used to quantify SIMS in the concentation range of a few percent. This is especially of interest for semiconductor materials, such as PSG, BPSG, and FSG, that are difficult to profile by other methods. SIMS line scan measurements can be quantified by first scanning over a series of depth profiles made at increasing depth into an ion implanted reference. Focused ion beam (FIB) workstations can be used to prepare cross sections of ion implanted standards that can be lifted out and mounted perpendicular to the analysis beam. Secondary ion images of the cross sections provide quantification of the element of interest. FIB prepared cross sections of high dose implanted standards can be used for AES and EDS calibration asnd for determination of detection limit.