Secondary Ion Mass Spectrometry (SIMS) is reported from multiple-element ion implants. The implants include a thirteen element metal set dubbed the Universal Metal Standard (UMS) and a six element gas set called the Universal Gas Standard (UGS). These implants were made into films of interest for microelectronics (silicon, silicides, wiring layers, liner metals, organic dielectrics, and polymer dielectrics.) Because species are co-implanted, the relative sensitivity factor (RSF) for many elements are generated with each SIMS profile. Because the implant sets are self-consistent, ion yields can be readily compared from matrix to matrix. The literature has compared ion yields within single matrices using the RSF. This study performs a broader comparison across matrices and requires a more general metric. In SIMS, the useful ion yields of potassium positive ions and chlorine negative ions approach a yield-saturating limit. To compare matrices, we obtain normalized useful yields (NUY), where the normalization is to the potassium or chlorine yields from silicon. In this paper we document the ion implants sets themselves, we show some of the SIMS profiles, and we note trends in ion yields and implications for SIMS analysis.