AVS 47th International Symposium
    Material Characterization Thursday Sessions
       Session MC-ThA

Paper MC-ThA9
XPS Analysis of Si Samples Prepared Using the FIB Lift-Out Technique

Thursday, October 5, 2000, 4:40 pm, Room 207

Session: Evolving Technologies in Surface Analysis
Presenter: A.C. Ferryman, Kent State University
Authors: A.C. Ferryman, Kent State University
J.E. Fulghum, Kent State University
L.A. Giannuzzi, University of Central Florida
F.A. Stevie, Cirent Semiconductor
Correspondent: Click to Email
Si samples prepared using the FIB lift-out technique were analyzed using high spatial resolution XPS imaging and spectroscopy. Sample mounting and associated problems with sample location will be discussed. The analyzed samples were 5 x 20 micron cross-sections mounted on carbon-coated TEM grids. Results indicate that XPS data can be acquired from FIB lift-out samples. XPS provides new information about the effect of Ga surface residue on the Si surface.