AVS 47th International Symposium
    Material Characterization Thursday Sessions
       Session MC-ThA

Paper MC-ThA8
Ion Channeling Effects on the FIB Milling of Crystalline Materials

Thursday, October 5, 2000, 4:20 pm, Room 207

Session: Evolving Technologies in Surface Analysis
Presenter: B.W. Kempshall, University of Central Florida
Authors: B.W. Kempshall, University of Central Florida
S.M. Schwarz, University of Central Florida
B.I. Prenitzer, Lucent Technologies
L.A. Giannuzzi, University of Central Florida
R.B. Irwin, Lucent Technologies
F.A. Stevie, Lucent Technologies
Correspondent: Click to Email
The focused ion beam (FIB) instrument is being used as a fundamental tool for the investigation of ion beam/material interactions. One particular topic of interest is the effects of ion channeling on the sputtering behavior of Si and Cu. Although applications involving the FIB milling of Si are straightforward, the FIB milling of Cu may be complicated by effects such as the development of milling induced topographical features. The difference in milling behavior between Si and Cu may be attributed to the inherent physical properties of materials that influence the sputtering yield. As ions channel deep into the target along preferred crystallographic directions, a corresponding decrease in sputtering yield is observed. In this presentation, the effects and the mechanism of Ga+ channeling in Cu is used to illustrate the relationship between the sputtering yield, the quality of FIB mill cuts, and the surface characteristics of FIB milled Cu for various crystallographic orientations. The correlation between the theoretical Lindhard-Onderdelinden axial channeling model and the observed ion channeling contrast in the FIB milling of Cu is investigated.