AVS 47th International Symposium
    Material Characterization Thursday Sessions
       Session MC-ThA

Paper MC-ThA7
Dose Quantity Effects on Nano-scaled Dot Size and Depth Profile of Gallium Implantation on Silicon by Finely Focused Ion Beam

Thursday, October 5, 2000, 4:00 pm, Room 207

Session: Evolving Technologies in Surface Analysis
Presenter: L. Shen, Vanderbilt University
Authors: L. Shen, Vanderbilt University
L.C. Feldman, Vanderbilt University
R.F. Haglund Jr., Vanderbilt University
R.A. Weller, Vanderbilt University
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In a FFIB(Finely Focused Ion Beam) System, the beam current is controlled by choosing the aperture, which determines the spot size on nano-materials fabrication. The total beam dose is determined by beam current intensity, beam duration time and scan repeat rate. The total dose determines the ultimate feature size. We have investigated the total dose effects on apparent spot size and depth profiles by controlling beam current intensity, beam dwell time and/or scan times. In particular we report the AFM apparent spot size for a single scan as a function of dwell time and compare to theoretical estimates. We also report apparent spot size as a function of number of scans. Achieving minimum spot size is critical for creating nano-scale feature size and depth profile.@footnote 1@ @FootnoteText@ @footnote 1@Supported in part by the National Science Foundation under grant DMR-9871234 and by the U.S. Army Research Office under contract DAAD-19-99-1-0283.