AVS 47th International Symposium
    Material Characterization Thursday Sessions
       Session MC-ThA

Paper MC-ThA2
In- and Ex-situ Characterization by Second-harmonic Generation of the RPECVD Oxidation and Nitridation of Silicon and Ex-situ Comparisons with Other Optical Techniques

Thursday, October 5, 2000, 2:20 pm, Room 207

Session: Evolving Technologies in Surface Analysis
Presenter: G.D. Powell, North Carolina State University
Authors: G.D. Powell, North Carolina State University
R.S. Johnson, North Carolina State University
G. Lucovsky, North Carolina State University
D.E. Aspnes, North Carolina State University
Correspondent: Click to Email
We report azimuthal dependences of second-harmonic generation (SHG) spectra obtained in-situ and ex-situ from 800 to 900 nm of oxide, nitride, and oxynitride interfaces formed by Remote Plasma Enhanced Chemical Vapor Deposition (RPECVD) on singular and vicinal Si(111) substrates. Spectral dependences are linear over this limited spectral range that make it possible to compare slopes and intercepts among the different processes. SHG measurements were performed for both p-p and p-s polarization configurations. We found only slight variations for the terminations except for one parameter describing the electric field phase differences for the step for the nearest <001> direction. We also observe significant differences, of the order of 10 meV, in ellipsometrically determined apparent critical point energies and broadening parameters under various processing conditions. Finally, we advance beyond a purely phenomenological model of a signal associated with the bond symmetries to a more physical model that directly connects the macroscopically measured far-field intensity to the dipole radiation from the anharmonic bonds.