AVS 47th International Symposium
    Material Characterization Friday Sessions
       Session MC+NS-FrM

Paper MC+NS-FrM9
Investigations into the Chemical Nature of the Interfaces of Cu and Ta with SiN

Friday, October 6, 2000, 11:00 am, Room 207

Session: Characterization of Interfaces and Thin Films
Presenter: J.F. Bernard, Advanced Micro Devices
Authors: J.F. Bernard, Advanced Micro Devices
E. Adem, Advanced Micro Devices
S. Avanzino, Advanced Micro Devices
M.-V. Ngo, Advanced Micro Devices
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Surface chemistry is typically related to film properties such as adhesion, wetability, etc. For Cu interconnects the surface mobility of of Cu ions can affect electromigration and line-to-line leakage in damascene structures.@footnote 1@ The surface treatment of Cu after CMP planarization will effect the chemical nature of the interface with the capping material as well as the interface of any liners with the cap. The chemical nature of the interface of Cu with SiN has been determined through XPS and AES compositional and chemical state depth profile analyses. The effect of plasma treatments on the Cu surface and resulting interfaces with the SiN capping layer is detailed. A mechanism for the Cu° catalyzed generation of the observed interfacial non-N bonded Si resulting from a silane based SiN deposition is proposed. Additionally, the interface of SiN with Ta is investigated to explore the effects of Cu treatments on the liner/cap interface. The basic outgassing behaviors of Cu and Ta are also discussed relative to the effects observed at the interface with the SiN capping layer. @FootnoteText@ @footnote 1@ Noguchi, J., "TDDB Improvement in Cu Metallization under Bias Stress"; International Relaiabilty Physics Symposium 2000.