AVS 47th International Symposium
    Material Characterization Friday Sessions
       Session MC+NS-FrM

Paper MC+NS-FrM6
Atomic Resolved Spectroscopic Study of AlGaAs/GaAs/InGaAs by Cross-sectional Scanning Tunneling Microscope

Friday, October 6, 2000, 10:00 am, Room 207

Session: Characterization of Interfaces and Thin Films
Presenter: J. Yu, University of Illinois
Authors: J. Yu, University of Illinois
L. Liu, University of Illinois
J. Li, University of Illinois
J.W. Lyding, University of Illinois
Correspondent: Click to Email
An atomic resolved cross-sectional STM spectroscopic study has been performed on UHV-cleaved AlGaAs/GaAs/InGaAs heterostructures. Current imaging tunneling spectroscopy (CITS) results demonstrate significant electronic structure contrast between the column III and V sublattices as well as for the different compositional regions. The resulting images reveal surface structures not always evident in topographic images. Using a pattern recognition algorithm derived from the VERI analysis developed at Sandia,@footnote 1@ the image pixels can be grouped into classes according to similar electronic structure. This technique can be applied to automatically identify the spatial distribution of various elements during semiconductor growth. A detailed analysis and physical explanation of the spectra will be presented. @FootnoteText@@footnote 1@Bouchard, A. M., Osbourn, G. C., and Swartzentruber, B. S., Surf. Sci. 321, 276 (1994).