AVS 47th International Symposium
    Material Characterization Friday Sessions
       Session MC+NS-FrM

Paper MC+NS-FrM10
On the Organic Content and Outgassing Behavior of Organometallic-based CVD-TiN Films

Friday, October 6, 2000, 11:20 am, Room 207

Session: Characterization of Interfaces and Thin Films
Presenter: E. Adem, Advanced Micro Devices
Authors: J.F. Bernard, Advanced Micro Devices
E. Adem, Advanced Micro Devices
Correspondent: Click to Email
The drive to smaller IC geometries has led to an increasing use of organometallic precursor based chemical vapor depositions of TiN barrier films. The CVD-TiN process yields more uniform step coverage in high aspect ratio features. The CVD process also presents challenges in generating a consistently high quality TiN film. At lower temperatures both organometallic and metal halide precursors yield a lower density film with high resistivity and low N conents. A N-based treatment process has been widely employed to i)reduce the organic component and ii)increase the N content of the films resulting from the use of TDMAT or TDEAT organometallics. The remaining C in the film has been shown to be present as a cabide of Ti. The chemical state of this remaining C has been further examined through the use of depth profiling, FT/IR, and wet chemical etching techniques. Deviations in the plasma treatment or the as deposited thickness can have a significant effect on the film quality. The affinity for O exhibited by uncapped PVD-TiN is higher still for untreated CVD films. The evolved gas profiles for a low resistivity film are dominated by H/H@sub2@ outgassings. Films with a deviation in plasma conditions exhibited higher resistivity beyond spec limits and outgassings dominated by OH.