AVS 47th International Symposium
    Incorporating Principles of Industrial Ecology Tuesday Sessions
       Session IE-TuA

Paper IE-TuA5
Meeting IBM's PFC Emission Goals: Using the IBM In Situ Dilute NF@sub 3@/He Plasma Clean in Production on the Applied Materials 200 mm P5000 Lamp-Heated CVD Toolset

Tuesday, October 3, 2000, 3:20 pm, Room 304

Session: Green Manufacturing
Presenter: C.M. Hines, IBM Microelectronics
Authors: C.M. Hines, IBM Microelectronics
W.R. Entley, Air Products and Chemicals, Inc.
R.V. Pearce, Air Products and Chemicals, Inc.
A.D. Johnson, Air Products and Chemicals, Inc.
Correspondent: Click to Email
The major use of perfluorocompounds (PFCs) in semiconductor manufacturing is for residue removal following thin film deposition in chemical vapor deposition (CVD) chambers. One promising strategy to reduce PFC emissions in CVD chambers is the use of alternative clean gases that have lower global warming potentials and inherently higher utilization efficiencies (the percentage of the PFC that is consumed during the clean process) than the traditionally used carbon based PFCs, CF@sub 4@ and C@sub 2@F@sub 6@. Using this strategy, IBM developed a one-step in situ dilute nitrogen trifluoride/helium (NF@sub 3@/He) clean to replace the process of record (POR) C@sub 2@F@sub 6@-based cleans used in their Applied Materials (AMAT) 200mm Precision 5000 lamp-heated (DxL) CVD chambers. Successful implementation of the dilute NF@sub 3@/He clean into production is considered key to IBM meeting its PFC reduction goals. Using quadrupole mass spectrometry (QMS) and Fourier transform infrared (FTIR) spectroscopy the process emissions of IBM's POR C@sub 2@F@sub 6@-based cleans and the new one-step dilute NF@sub 3@/He clean following deposition of both phosphosilicate glass (PSG) and tetraethylorthosilicate (TEOS) oxide were quantified. For TEOS oxide deposition the one-step dilute NF@sub 3@/He clean reduced the MMTCE value of the clean by 99 % with respect to the POR C@sub 2@F@sub 6@ clean. For PSG deposition, the one-step dilute NF@sub 3@/He clean reduced the MMTCE value of the POR clean by 96 %. In addition, the one-step dilute NF@sub 3@/He clean significantly reduced the total combined volumetric emissions of F@sub 2@ and HF compared to the POR C@sub 2@F@sub 6@ cleans. This presentation will include an overview of the implementation of the NF@sub 3@/He clean, current production data including tool performance (particles, mean time between wetstrips, etc.), and clean time/emissions comparisons between the POR C@sub 2@F@sub 6@ cleans and the one-step NF@sub 3@/He clean.