AVS 47th International Symposium
    Dielectrics Thursday Sessions
       Session DI+EL+MS-ThA

Paper DI+EL+MS-ThA3
Process Window Extension of TiN Diffusion Barrier using Pre-oxidation of Ru and RuO@sub x@ Film for (Ba,Sr)TiO@sub 3@ Dielectric Film

Thursday, October 5, 2000, 2:40 pm, Room 312

Session: High K Dielectrics: Perovskites
Presenter: D.-S. Yoon, Hyundai Electronics Industries Co. Ltd., Korea
Authors: D.-S. Yoon, Hyundai Electronics Industries Co. Ltd., Korea
H.J. Kim, Hyundai Electronics Industries Co. Ltd., Korea
S. Kim, Hyundai Electronics Industries Co. Ltd., Korea
Correspondent: Click to Email
(Ba,Sr)TiO@sub 3@(BST) thin film and other high dielectric oxides have attracted considerable attention due to their possible application in dynamic random access memories. However, serious integration issues are faced with in many cases because BST films need to be grown at rather high deposition or post-annealing temperatures of above 600°C in an oxidizing ambient. Deterioration of capacitor performance may result from interdiffusion and oxidation. Therefore, a diffusion barrier for oxygen should be developed for high-density DRAM device. In order to extend the process window of conventional sputtered TiN diffusion barrier and find out a proper electrode, in this experiment, the effect of pre-annealing method on the oxidation behavior of TiN barrier during 2 step annealing for BST dielectric film. Rapid thermal annealing in oxygen ambient (RTO) and N@sub 2@O plasma oxidation was respectively introduced to form a thin RuO@sub x@ layer and bind between oxygen and Ru at the surface of each Ru and RuO@sub x@ film. It is expected that a thin RuO@sub x@ layer be formed at the surface of each film by RTO and N@sub 2@O plasma. This can be retarded the oxygen indiffusion through Ru and RuO@sub x@ layer at high temperature due to complex diffusion paths and strongly stuffed along the grain boundaries as well as matrix. Two steps annealing for BST dielectric film is recently introduced to minimize the oxidation of diffusion barrier. In this work, a role of thin RuO@sub x@ oxidized layer formed at the surface of each Ru and RuO@sub x@ film by different pre-annealing methods prepared with/without BST deposition is investigated during two steps annealing.