AVS 47th International Symposium
    Biomaterial Interfaces Wednesday Sessions
       Session BI-WeP

Paper BI-WeP4
Photovoltaic Characteristics of bR/p-Silicon Heterostructures using Surface Photovoltage Spectroscopy

Wednesday, October 4, 2000, 11:00 am, Room Exhibit Hall C & D

Session: Poster Session
Presenter: T.J. Li, Jilin University, P.R. China
Authors: L.S. Li, Jilin University, P.R. China
T. Xu, Jilin University, P.R. China
J. Jin, Jilin University, P.R. China
Y.J. Zhang, Jilin University, P.R. China
T.J. Li, Jilin University, P.R. China
B.S. Zou, Georgia Institute of Technology
J.P. Wang, Georgia Institute of Technology
Correspondent: Click to Email
In bR-based photoelectric devices, the highly efficient electric response can be obtained only when the bR molecules have a nonrandom orientation. LB technique enables molecular-order organization that can be used to incorporate bR into devices. As a prototype molecular electronic device, it will be more significant to deposit oriented bR films on a silicon substrate. In this paper, orientated bR films were deposited on the hydrophilic and hydrophobic silicon substrates using the LB technique. The cytoplasmic (CP) or extracelluar (CE) surface of bR face the silicon directly, giving oriented patterns of Si/CP-EC and Si/EC-CP, respectively. The photovoltaic features and interfacial charge separation of p-Si/bR/ITO heterostructure are studies by surface photovoltage spectroscopy (SPS). The different photovoltage response values obtained are due to the nonrandom orientation of bR in the LB films on the hydrophilic versus hydrophobic silicon substrates. The photovoltage response value versus external potential of the p-Si/CP-EC/ITO heterostructure shows an obviously rectifying behavior. Compared with the p-Si/ITO heterostructure, the response value of SPS increases more rapidly in the case of the positive external potential.