| AVS 46th International Symposium | |
| Manufacturing Science and Technology Group | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | MS-TuA1 CD Control Optimization Methodology on Shallow Trench Isolation Substrate for Sub-0.25µm Technology Gate Patterning M.H. Fan, H. Gerung, P. Yelehanka, A. Cheng, M.S. Zhou, C. Chi, Chartered Semiconductor Manufacturing Ltd., Singapore, C.H. Tan, J. Xie, Institute of Microelectronics, Singapore |
| 2:20pm | MS-TuA2 Patterning of Xerogel in High Density Fluorocarbon Plasmas T.E.F.M. Standaert, State University of New York at Albany, C. Hedlund, Uppsala University, Sweden, E. Joseph, G.S. Oehrlein, State University of New York at Albany, W.N. Gill, P.C. Wayner, J.L. Plawsky, Rensselaer Polytechnic Institute |
| 2:40pm | MS-TuA3 Surface Science of Tungsten CMP Removal D.J. Stein, D.L. Hetherington, Sandia National Laboratories, J.L. Cecchi, University of New Mexico |
| 3:00pm | MS-TuA4 Invited Paper Yield Improvement Through Multizone Uniformity Control of a CMP Process Utilizing a Pre and Post-Measurement Strategy J. Moyne, K. Khan, University of Michigan, J. Colt, J. Chapple-Sokol, R. Nadeau, P. Smith, IBM, T. Parikh, SEMATECH |
| 3:40pm | MS-TuA6 Invited Paper Modeling, A Tool for Technology Development J.L. Garcia-Colevatti, Intel Corporation |
| 4:20pm | MS-TuA8 Simulations of TiN Barrier Films Deposited by I-PVD on High Aspect Ratio Features: Macrostructure and Composition M. Li, S.K. Dew, M.J. Brett, University of Alberta, Canada, T.J. Smy, Carleton University, Canada |
| 4:40pm | MS-TuA9 Investigation of Si and SiO@sub 2@ Etch Mechanisms Using an Integrated Surface Kinetics Model@footnote 1@ D. Zhang, M.J. Kushner, University of Illinois, Urbana |
| 5:00pm | MS-TuA10 Design of a Dual Frequency PECVD Reactor for Advanced Integrated Circuits Processing S. Raoux, M. Mudholkar, W.N. Taylor, M.A. Fodor, J. Huang, D. Silvetti, K. Fairbairn, Applied Materials |