AVS 46th International Symposium
    Vacuum Technology Division Wednesday Sessions
       Session VT-WeA

Invited Paper VT-WeA5
Adapting Dry Vacuum Technology to Cu CVD Effluent Abatement in Integrated Circuit Manufacturing

Wednesday, October 27, 1999, 3:20 pm, Room 610

Session: Dry Pumping Systems
Presenter: J.R. Bottin, Leybold Vacuum Products
Authors: J.R. Bottin, Leybold Vacuum Products
D.G. Mrotek, Leybold Vacuum Products
Correspondent: Click to Email

Developments in the manufacturer of IC's are driven by the need for a higher transistor density and increased speed. The semiconductor industry is aggressively pursuing techniques that enable 0.18 µm interconnects, with the goal of 0.13 µm by 2003 or sooner. Because of its low resistivity and high electromigration resistance, copper is the metal of choice for sub-quarter micron interconnects. New development will be required for copper processes including the abatement of copper and copper by-products. Chemical vapor deposition (CVD) of copper utilizing a liquid precursor is an efficient means for depositing seed layers of copper for high aspect ratio geometry. The reaction of the liquid precursor produces Cu, Cu(hfac)@sub 2@ and TMVS, which all have unique properties that can lead to premature dry pump failure and high abatement costs. A viable, environmentally friendly solution has been developed and is comprised of an optimized dry pump, inlet reactor, cooled exhaust collector and resin bed abatement device with integrated electrical control. The inlet reactor decomposes the residual liquid precursor leaving the tool and removes elemental copper. The residual Cu(hfac)@sub 2@ and TMVS remain in the vapor phase through the vacuum pump. The mixture is then cooled in an exhaust collector where Cu(hfac)@sub 2@ is condensed prior to entering the resin bed abatement device, where the TMVS is subsequently removed. The exhaust collector has been designed as a shipping vessel to transport the collected Cu(hfac)@sub 2@ back to the manufacturer for recycle, significantly reducing abatement costs. The system goal for 99% or greater removal of each component at the exhaust of the resin bed is presently being validated through beta-site testing. With copper interconnects representing the future of IC's, it is imperative that suppliers meet the process challenge posed by the use of copper. The system described above is a critical step toward meeting the challenge of Cu CVD effluent abatement.