This paper will focus on the introduction of plasma etching and photoresist ashing from the late 1960's to 1975 as seen by International Plasma Corporation (IPC), the first company dedicated exclusively to the manufacture of "barrel" plasma ashers for the semiconductor industry [subsequently to be named Dionex Gas Plasma Systems, Branson IPC, and finally to disappear into Gasonics International]. The history from 1-inch wafers through 6-inch wafer development will be discussed in terms of equipment design features and process technology for both resist stripping and plasma etching. Limitations of isotropic etching and uniformity problems with barrel chambers are discussed; the introduction of the first multi-step automatic plasma ashing equipment is described. Early etching of oxide, nitride, and metals as well as stripping will be illustrated with SEM examples of the then current process technology and photographs of the equipment at that time.