AVS 46th International Symposium
    Vacuum Metallurgy Division Tuesday Sessions
       Session VM-TuP

Paper VM-TuP1
Pattern Writing by Implantation in a Large-scale PSII System with Planar Inductively Coupled Plasma Source

Tuesday, October 26, 1999, 5:30 pm, Room 4C

Session: Poster Session
Presenter: L. Wu, College of William and Mary
Authors: L. Wu, College of William and Mary
D.M. Manos, College of William and Mary
T.J. Venhaus, College of William and Mary
Correspondent: Click to Email
A large-scale PSII system has been built. With chamber 28.5in in diameter and 20in tall, pulses of up to 100KV, and base pressure in the 10@super -8@torr range, it is one of the largest PSII systems. It has been operated with hot filament, hollow cathode and recently with 22.5-inch diameter quartz window for planar RF ICP. This paper compares implantation with these plasma sources, demonstrating the advantages of RFI. It also reports measurements of the plasma density and spatial distribution using Langmuir probe for different RF power, gas pressure and plasma compositions for implanting alloys. Results of implanting alloys including large-area stainless steel cathodes to reduce field emission are reported. Metallic and semiconductor samples have also been implanted through masks with various plasma compositions to produce small geometric patterns of interest for device manufacturing. The samples are characterized by variable-angle spectrometric ellipsometry (VASE), SEM, AES, SIMS, and XPS, and for electrical and mechanical properties. Depth profiles obtained by VASE, SIMS, AES and XPS are compared to Monte-Carlo calculations (Tri-Dyn, Trim, ProfileCode). Measured lateral and depth profiles are compared to the mask features to assess lateral diffusion, pattern transfer fidelity, and wall-effects on the depth profile. The paper also presents the results of MC-hybrid and PIC calculations of the flux and angle of ion trajectories through the boundary layer predicting the uniformity of flux as a function of 3-D location on objects in the expanding sheath and to evaluate the fidelity of pattern transfer as a function of feature size. Sample heating and diffusion effect is included.