Ionized PVD has deep potential for wide range of applications in thin film deposition. Poly Si deposition on glass should be one of them. A-Si based TFT technology has a limit of electron mobility less than 1 cm@super 2@ V/sec. Excimer laser annealing would be one solution for recrystallization but too expensive and slow process in economic point of view. As Si has very high melting temperature, the required substrate temperature for crystallization is well over the softening temperature of conventional glass in flat panel industry. RF ICP based ionized magnetron sputtering was applied to deposit polysilicon on glass substrate while keeping substrate temperature less than 400C. From X-ray diffraction analysis, small evidence for microcrystalline Si was confirmed at 250C of substrate temperature and floating substrate potential. The effects of pulsed dc sputtering power, substrate biasing frequency and ICP driving frequency will be addressed in detail.